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savantic semiconductor product specification silicon pnp power transistors BD240/a/b/c d escription with to-220c package complement to type bd239/a/b/c applications for medium power linear and switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ) symbol parameter conditions value unit BD240 -55 BD240a -70 BD240b -90 v cbo collector-base voltage BD240c open emitter -115 v BD240 -45 BD240a -60 BD240b -80 v ceo collector-emitter voltage BD240c open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -2 a i cm collector current-peak -4 a i b base current -0.6 a p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -65~150
savantic semiconductor product specification 2 silicon pnp power transistors BD240/a/b/c c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit BD240 -45 BD240a -60 BD240b -80 v ceo(sus) collector-emitter sustaining voltage BD240c i c =-30ma; i b =0 -100 v v cesat collector-emitter saturation voltage i c =-1 a;i b =-0.2 a -0.7 v v be base-emitter on voltage i c =-1a ; v ce =-4v -1.3 v BD240/a v ce =-30v; i b =0 i ceo collector cut-off current BD240b/c v ce =-60v; i b =0 -0.3 ma BD240 v ce =-45v; v be =0 BD240a v ce =-60v; v be =0 BD240b v ce =-80v; v be =0 i ces collector cut-off current BD240c v ce =-100v; v be =0 -0.2 ma i ebo emitter cut-off current v eb =-5v; i c =0 -1 ma h fe-1 dc current gain i c =-0.2a ; v ce =-4v 40 h fe-2 dc current gain i c =-1a ; v ce =-4v 15
savantic semiconductor product specification 3 silicon pnp power transistors BD240/a/b/c package outline fig.2 outline dimensions (unindicated tolerance:0.10 mm)

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